Features：

High power density, simple drive circuit and wide safe operation area

Preferred power electronic equipments with medium or high power and  low or medium frequency 

silicon-based IGBT is the first choice of power semiconductor devices for the working frequency range below 105Hz, power ranges from several kilowatts to 10 megawatts

PA: 3 Phase Bridge + Brake IGBT: Insulated Gate Bipolar Transistor

PB: 3 Phase Bridge IGBT: Insulated Gate Bipolar Transistor

FB: 4 Phase Bridge IGBT: Insulated Gate Bipolar Transistor

DA: Dual/Half Bridge IGBT: Insulated Gate Bipolar Transistor

DB: Half Bridge without Rectifier IGBT: Insulated Gate Bipolar Transistor

FA: Fourpack IGBT: Insulated Gate Bipolar Transistor

ZA: Single Switch IGBT: Insulated Gate Bipolar Transistor

SA: Sixpack IGBT: Insulated Gate Bipolar Transistor

Typical application fields:

New energy:

    New energy vehicles (motor drive control system, OBC, air conditioning, steering, Charging pole, vehicle thermal management system, charging inverter system,  etc.)

    New energy power generation ( photovoltaic inverter, wind power converter, electric tools, energy storage equipment, security UPS, etc.)

Industrial control: 

    Frequency converters,  inverter welder, UPS, servers, industrial motors, robots and mechanical arms, automatic control, etc. 

Domestic appliances and others:

    Intelligent Power Management (IPM)

    Railway transit (traction converter), Smart grid, LED lighting, AC/DC conversion, photovoltaic inverter, high voltage grid, etc.